DMN2500UFB4

DMN2500UFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(on) max 0.4Ω @ VGS = 4.5V ID TA = 25°C 1A 0.8A Features and Benefits Low On-Resistance Very Low Gate Threshold Voltage VGS(TH), 1.0V max Low Input Capacitance Fast Switching Speed Ultra-Small Surfaced Mount Package Ultra-low package profile, 0.4mm maximum package height ESD Protected Gate Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability ADVANCE INFORMATION 20V 0.7Ω @ VGS = 1.8V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. DC-DC Converters Power management functions Mechanical Data Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.001 grams (approximate) Drain X2-DFN1006-3 S D G Gate ESD PROTECTED Bottom View Top View Internal Schematic Gate Protection Diode Source EQUIVALENT CIRCUIT Ordering Information (Note 3) Part Number DMN2500UFB4-7 DMN2500UFB4-7B Notes: Case X2-DFN1006-3 X2-DFN1006-3 Packaging 3,000/Tape & Reel 10,000/Tape & Reel...