IRFHM830DPbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
30 4.3 13 1.1 40
V mΩ nC Ω A
3.3mm x 3.3mm PQFN
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
Synchronous MOSFET for Buck Converters
Features and Benefits
Features Low RDSon (≤ 4.3mΩ )
Schottky intrinsic diode with low forward voltage
Benefits Lower Conduction Losses
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