IRFH8337PBF

IRFH8337PbF HEXFET® Power MOSFET VDS VGS max 30 ± 20 12.8 19.9 4.7 16.2 V V mΩ nC A PQFN 5X6 mm RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) = 25°C) i Applications Control MOSFET for high frequency buck converters Features and Benefits Features Low Thermal Resistance to PCB (< 4.7°C/W) Low Profile (<1.2mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Benefits Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH8337TRPBF IRFH8337TR2PBF Package Type PQ FN 5mm x 6mm PQ FN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EO L notice #259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C ID @ TC = 25°C IDM PD @TA = 25°C PD @TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Max. 30 ± 20 12 9.7 35 22 Units V g Power Dissipation g c hi hi 16.2i 65 3.2 27 A W W/°C °C Linear Derating Factor Operating Junction and ...