HEXFET Power MOSFET
IRFH5306PbF
HEXFET® Power MOSFET
V DS R DS(on) max
(@VGS = 10V)
30 8.1 7.8 1.4 44
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical...
Description
IRFH5306PbF
HEXFET® Power MOSFET
V DS R DS(on) max
(@VGS = 10V)
30 8.1 7.8 1.4 44
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) R G (typical) ID
(@Tc(Bottom) = 25°C)
Applications
Control MOSFET for buck converters
Features and Benefits
Features Low charge (typical 7.8nC) Low thermal resistance to PCB (< 4.9°C/W) 100% Rg tested Low profile (< 0.9 mm) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Benefits Lower switching losses Increased power density Increased reliability Increased power density Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability
results in
⇒
Orderable part number IRFH5306TRPBF IRFH5306TR2PBF
Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm
Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400
Note
EOL notice #259
Absolute Maximum Ratings
Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 ±20 15 13 44 28 60 3.6 26 0.029 -55 to + 150 Units V
A
g g
c
W W/°C °C
Linear Derating Factor Operating Junction and Storage Temperature Range
g
Notes ...
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