IRFH5306TRPBF

IRFH5306PbF HEXFET® Power MOSFET V DS R DS(on) max (@VGS = 10V) 30 8.1 7.8 1.4 44 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) R G (typical) ID (@Tc(Bottom) = 25°C) Applications Control MOSFET for buck converters Features and Benefits Features Low charge (typical 7.8nC) Low thermal resistance to PCB (< 4.9°C/W) 100% Rg tested Low profile (< 0.9 mm) Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification Benefits Lower switching losses Increased power density Increased reliability Increased power density Multi-vendor compatibility Easier manufacturing Environmentally friendly Increased reliability results in ⇒ Orderable part number IRFH5306TRPBF IRFH5306TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note EOL notice #259 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 ±20 15 13 44 28 60 3.6 26 0.029 -55 to + 150 Units V A g g c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  ...