IRFH5304TRPBF

IRFH5304PbF HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) VDS 30 4.5 16 79 V mΩ nC A PQFN 5X6 mm Qg (typical) ID (@Tc(Bottom) = 25°C) Applications Control MOSFET for buck converters Features and Benefits Features Benefits Low charge (typical 16nC) Low Thermal Resistance to PCB (<2.7°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number IRFH5304TRPBF IRFH5304TR2PBF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Tape and Reel Tape and Reel Quantity 4000 400 Note EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ T A = 25°C ID @ T A = 70°C ID @ T C(Bottom) = 25°C ID @ T C(Bottom) = 100°C IDM PD @T A = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Max. 30 ± 20 22 17 79 50 320 3.6 46 0.029 -55 to + 150 A Units V g Power Dissipation g c W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range g Notes  through † are ...