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IRFH5303PBF

International Rectifier

HEXFET Power MOSFET


Description
IRFH5303PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 30 4.2 15 0.6 82 V m : Qg (typical) RG (typical) ID nC : A (@Tc(Bottom) = 25°C) PQFN 5X6 mm Applications Control MOSFET for high frequency buck converters Features and Benefits Features Benefits Low charge (typical 15nC) Low Rg (typical 0.6 Ω) Low Thermal Resistance to PCB (<2.7°C/W) ...



International Rectifier

IRFH5303PBF

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