IRFH5204TRPbF

IRFH5204PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) 40 4.3 43 1.7 100 V mΩ nC Ω A PQFN 5X6 mm Qg (typical) RG (typical) ID (@Tc(Bottom) = 25°C) h Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Features and Benefits Features Benefits Low RDSon (< 4.3 mΩ) Low Thermal Resistance to PCB (< 1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) results in Industry-Standard Pinout ⇒ Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Orderable part number IRFH5204TRPbF IRFH5204TR2PbF Package Type PQFN 5mm x 6mm PQFN 5mm x 6mm Lower Conduction Losses Enables better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Note Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 EOL notice # 259 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 40 ± 20 22 18 100 100 400 3.6 105 Units V g g c h h A W W/°C °C Linear D...