IRFH5204PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
40 4.3 43 1.7 100
V mΩ nC Ω A
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
h
Applications
Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters
Features and Benefits
Features Benefits
Low RDSon (< 4.3 mΩ) Low Th...
