KF6N60I

SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 600V, ID= 5A RDS(ON)=1.4 (Max) @VGS =10V Qg(typ.) =16nC 1 2 3 KF6N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF6N60D A C K D L B H G F F J E N M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 K 2.30 + _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N 0.1 MAX O MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 PD Derate above25 Tj Tstg 0.56 150 -55 150 W/ 1 1. GATE 2. DRAIN 3. SOURCE O SYMBOL VDSS VGSS ID RATING KF6N60D/I 600 30 5 3.15 UNIT V V A DPAK (1) KF6N60I H J m IDP EAS EAR dv/dt CN ãt —écˆg O m w N 15* 180 4 B D A C co DIM A B MILLIMETERS h. mJ K M _ 0.2 6.6 + _ 0.2 6.1 + _ 0.3 5.34 + _ 0.2 0.7 + _ 0.3 9.3 + _ 0.2 2.3 + _ 0.1 0.76 + _ 0.1 2.3 + _ 0.1 0.5 + _ 0.2 1.8 + _ 0.1 0.5 + _ 0.1 1.0 + 0.96 MAX _ 0.3 1.02 + -s kb mJ V/ns P N C D E F G .c w w 4.5 w G E H 69.4 W F F L J K L M Maximum Junction Tempera...