Document
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 31 4.6 17 Single
D
FEATURES
600 2.2
• Halogen-free According to IEC 61249-2-21 Definition • Surface Mount (IRFBC30S, SiHFBC30S) • Low-Profile Through-Hole (IRFBC30L, SiHFBC30L) • Available in Tape and Reel (IRFBC30S, SiHFBC30S) • Dynamic dV/dt Rating • 150 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC30L, SiHFBC30L) is a available for low-profile applications.
D2PAK (TO-263) SiHFBC30STRL-GE3a IRFBC30STRLPbFa SiHFBC30STL-E3a I2PAK (TO-262) SiHFBC30L-GE3 IRFBC30LPbF SiHFBC30L-E3
I2PAK (TO-262)
D2PAK (TO-263)
DESCRIPTION
G G D S
G D S S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a. See device orientation. D2PAK (TO-263) SiHFBC30S-GE3 IRFBC30SPbF SiHFBC30S-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) dV/dtc, e TA = 25 °C TC = 25 °C Currenta, e VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg for 10 s LIMIT 600 ± 20 3.6 2.3 14 0.59 290 3.6 7.4 3.1 74 3.0 - 55 to + 150 300d UNIT V
A W/°C mJ A mJ W V/ns °C
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 41 mH, Rg = 25 , IAS = 3.6 A (see fig. 12). c. ISD 3.6 A, dI/dt 60 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Uses IRFBC30, SiHFBC30 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91111 S11-1053-Rev. C, 30-May-11 www.vishay.com 1
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFBC30S, SiHFBC30S, IRFBC30L, SiHFBC30L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient (PCB Mounted, steady-state)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJC TYP. MAX. 40 1.7 UNIT °C/W
Note a. When mounted on 1" square PCB (FR-4 or G-10 material). For recommended footprint and soldering techniques refer to application note #AN-994.
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LS
VGS = 0, ID = 250 μA Reference to 25 °C, ID = 1 VGS = ± 20 V VDS = 600 V, VGS = 0 V VDS = 480 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 2.2 Ab Ac VDS = 50 V, ID = 2.2 mAc VDS = VGS, ID = 250 μA
600 2.0 2.5
0.62 -
4.0 ± 100 100 500 2.2 -
V V/°C V nA μA S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5c
-
660 86 19 11 13 35 14 7.5
31 4.6 17 nH ns nC pF
VGS = 10 V
ID = 3.6 A, VDS = 360 V, see fig. 6 and 13b, c
-
VDD = 300 V, ID = 3.6 A, Rg = 12 , RD = 82 , see fig. 10b, c
-
Between lead, and center of die contcat
-
-
370 2.0
3.6 A 14 1.6 810 4.2 V ns μC
G
S
TJ = 25 °C, IS = 3.6 A, VGS = 0
Vb
TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb, c
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; dut.