Si2303

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2303 P-Channel, 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.240 @ VGS = –10 V 0.460 @ VGS = –4.5 V ID (A)b –1.4 –1.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2303DS (A3T)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 25_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec –30 "20 –1.4 –10 –0.75 0.9 Steady State Unit V –1.3 A –0.6 0.7 –55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. RthJA Symbol Typical 115 140 Maximum 140 175 Unit _C/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V VDS = –30 V, VGS = 0 V, TJ = 55_C VD...