Document
IRFP264, SiHFP264
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single
D
FEATURES
250 0.075
• • • • • • •
Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
TO-247AC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
G
S D G S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247AC IRFP264PbF SiHFP264-E3 IRFP264 SiHFP264
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc for 10 s 6-32 or M3 screw Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 250 ± 20 38 24 150 2.2 1000 38 28 280 4.8 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 1.1 mH, Rg = 25 Ω, IAS = 38 A (see fig. 12). c. ISD ≤ 38 A, dI/dt ≤ 210 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91217 S11-0487-Rev. C, 21-Mar-11 www.vishay.com 1
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP264, SiHFP264
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.45 °C/W UNIT
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 23 Ab Ab VDS = 50 V, ID = 23
250 2.0 20
0.37 -
4.0 ± 100 25 250 0.075 -
V V/°C V nA μA Ω S
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
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5400 870 150 22 99 110 92 5.0 13
210 35 98 nH ns nC pF
VGS = 10 V
ID = 38 A, VDS = 200 V, see fig. 6 and 13b
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VDD = 125 V, ID = 38 A , Rg = 4.3 Ω, RD = 3.2 Ω, see fig. 10b
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Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
-
410 5.7
38 A 150 1.8 620 8.6 V ns μC
G
S
TJ = 25 °C, IS = 38 A, VGS = 0 Vb TJ = 25 °C, IF = 38 A, dI/dt = 100 A/μsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
www.vishay.com 2
Document Number: 91217 S11-0487-Rev. C, 21-Mar-11
This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP264, SiHFP264
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91217.