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IRFP264 Dataheets PDF



Part Number IRFP264
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFP264 DatasheetIRFP264 Datasheet (PDF)

IRFP264, SiHFP264 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single D FEATURES 250 0.075 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-247AC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the.

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IRFP264, SiHFP264 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 35 98 Single D FEATURES 250 0.075 • • • • • • • Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT TO-247AC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP264PbF SiHFP264-E3 IRFP264 SiHFP264 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc for 10 s 6-32 or M3 screw Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 250 ± 20 38 24 150 2.2 1000 38 28 280 4.8 - 55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 1.1 mH, Rg = 25 Ω, IAS = 38 A (see fig. 12). c. ISD ≤ 38 A, dI/dt ≤ 210 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91217 S11-0487-Rev. C, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP264, SiHFP264 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.45 °C/W UNIT SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode D SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS ΔVDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 20 V VDS = 250 V, VGS = 0 V VDS = 200 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 23 Ab Ab VDS = 50 V, ID = 23 250 2.0 20 0.37 - 4.0 ± 100 25 250 0.075 - V V/°C V nA μA Ω S VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 5400 870 150 22 99 110 92 5.0 13 210 35 98 nH ns nC pF VGS = 10 V ID = 38 A, VDS = 200 V, see fig. 6 and 13b - VDD = 125 V, ID = 38 A , Rg = 4.3 Ω, RD = 3.2 Ω, see fig. 10b - Between lead, 6 mm (0.25") from package and center of die contact D - G S - 410 5.7 38 A 150 1.8 620 8.6 V ns μC G S TJ = 25 °C, IS = 38 A, VGS = 0 Vb TJ = 25 °C, IF = 38 A, dI/dt = 100 A/μsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91217 S11-0487-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP264, SiHFP264 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91217.


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