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BC859CLT3G Dataheets PDF



Part Number BC859CLT3G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description General Purpose Transistors
Datasheet BC859CLT3G DatasheetBC859CLT3G Datasheet (PDF)

BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Emitter Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 Collector-Base Voltage BC8.

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BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Emitter Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 Collector-Base Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Symbol VCEO −65 −45 −30 VCBO −80 −50 −30 VEBO IC IC −5.0 −100 −200 V mAdc mAdc xx M G G Max 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 −55 to +150 mW mW/°C °C/W 556 Unit mW mW/°C °C/W xx M G 1 = Device Code xx = (Refer to page 6) = Date Code* = Pb−Free Package V Value Unit V 1 2 SOT−23 (TO−236AB) CASE 318 STYLE 6 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Symbol PD (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION °C See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2014 1 March, 2014 − Rev. 14 Publication Order Number: BC856ALT1/D BC856ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) BC856, SBC856 Series BC857, SBC857 Series BC858, NSBVC858 BC859 Series V(BR)CEO −65 −45 −30 −80 −50 −30 −80 −50 −30 −5.0 −5.0 −5.0 − − − − − − − − − − − − − − − − − − − − − − − − − − − − −15 −4.0 V Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage BC856 S, SBC856eries (IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only BC858, NSVB858, BC859 Series Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −1.0 mA) BC856, SBC856 Series BC857, SBC857 Series BC858, NSVBC858, BC859 Series BC856, SBC856 Series BC857, SBC857 Series BC858, NSVBC858, BC859 Series V(BR)CES V V(BR)CBO V V(BR)EBO V Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A (IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B, BC858B, NSVBC858B BC857C, SBC857C BC858C (IC = −2.0 mA, VCE = −5.0 V) BC856A, SBC856A, BC857A, SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C ICBO nA mA hFE − − − 125 220 420 90 150 270 180 290 520 − − −0.7 −0.9 − − − − − 250 475 800 − Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = −10 V, f = 1.0 MHz) Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series BC859 Series VCE(sat) − − VBE(sat) − − VBE(on) −0.6 − −0.75 −0.82 − − −0.3 −0.65 V V V fT Cob NF 100 − − − − 4.5 MHz pF dB − − − − 10 4.0 http://onsemi.com 2 BC856ALT1G Series BC857/BC858/BC859/SBC857/NSVBC858 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10 0.3 Figure 1. Normalized DC Current Gain Figure 2. “Saturation” and “On” Voltages -2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) θVB , TEMPERATURE COEFFICIENT (mV/ °C) TA = 25°C -1.6 1.0 -55°C to +125°C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA -0.8 -0.4 IC = -20 mA 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 3. Collector Saturation Region f , T CURRENT-GAIN - BAND.


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