BC856ALT1G

BC856ALT1G Series General Purpose Transistors PNP Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 VCEO −65 −45 −30 V Collector-Base Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 VCBO −80 −50 −30 V Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS VEBO IC IC −5.0 −100 −200 V mAdc mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA...