64M-BIT DYNAMIC RAM
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4264405, 42S65405, 4265405
64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO
Descript...
Description
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4264405, 42S65405, 4265405
64 M-BIT DYNAMIC RAM 16 M-WORD BY 4-BIT, EDO
Description
The µPD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation. Besides, the µPD42S65405 can execute CAS before RAS self refresh. These are packaged in 32-pin plastic TSOP (II) and 32-pin plastic SOJ.
Features
EDO (Hyper page mode) 16,777,216 words by 4 bits organization Single +3.3 V ± 0.3 V power supply Fast access and cycle time
Part number
Power consumption Active (MAX.) 360 mW
Access time (MAX.) 50 ns
R/W cycle time (MIN.) 84 ns
EDO (Hyper page mode) cycle time (MIN.) 20 ns
µPD4264405-A50 µPD42S65405-A50, 4265405-A50 µPD4264405-A60 µPD42S65405-A60, 4265405-A60
468 mW 324 mW 396 mW 60 ns 104 ns 25 ns
The µPD42S65405 can execute CAS before RAS self refresh.
Part number Refrech cycle 4,096 cycles/128 ms Refresh RAS only refresh, Normal read/write, CAS before RAS self refresh, CAS before RAS refresh, Hidden refresh RAS only refresh, Normal read/write CAS before RAS refresh, Hidden refresh RAS only refresh, Normal read/write, CAS before RAS refresh, Hidden refresh Power consumption at standby (MAX.) 0.72 mW (CMOS level input) 1.8 mW (CMOS level input)
µPD42S65405
µPD4264405
8,192 cycles/64 ms 4,096 cycles/64 ms
µPD4265405
4,096 cycles/64 ms
The information in this document is subject to change without notice. Document No. M1...
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