CEF08N2
Nov. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
250V , 6A , RDS(ON)=450m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole
D
G
G D S
S
TO-220F
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter Drain-...
