Part Number |
K1306 |
Manufacturers |
Hitachi Semiconductor |
Logo |
|
Description |
2SK1306 |
Datasheet |
K1306 Datasheet (PDF) |
2SK1306
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK1306
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 100 ±20 15 60 15 30 150 –55 to +150
Unit V V A A A W °C °C
2
2SK1306
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 100 ±20 — — 1.0 — — Forward transfer admittance Input .