IRFB4115PBF

IRFB4115PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID (Silicon Limited) 150V 9.3mΩ 11mΩ 104A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead Free l RoHS Compliant, Halogen-Free D G Gate S D G TO-220AB D Drain S Source Base Part Number IRFB4115PbF Package Type TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Number IRFB4115PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage e Peak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) d Single Pulse Avalanche Energy Thermal Resistance Symbol RθJC RθCS RθJA Parameter j Junction-to-Case Case-to-Sink, Flat Greased Surface ij Junction-to-Ambient Max. 104 74 420 380 2.5 ± 20 18 -55 to + 175 300 x x 10lb in (1.1N m) 830 Typ. ––– 0.50 ––– Max. 0.40 ––– 62 Units A W W/°C V V/ns °C mJ Units °C/W 1 www.irf.com © 2...