SVD1N80BTR

SVD1N80B/F/M/T_Datasheet 1A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD1N80B/F/M/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. TO-251-3L TO-220F-3L 1 3 1.Gate 2.Drain 3.Source TO-220-3L 2 FEATURES ∗ ∗ ∗ ∗ ∗ TO-92-3L 1A,800V,RDS(on)(typ)=13.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N80M SVD1N80T SVD1N80B SVD1N80BTR SVD1N80F Package TO-251-3L TO-220-3L TO-92-3L TO-92-3L TO-220F-3L Marking SVD1N80M SVD1N80T 1N80B 1N80B SVD1N80F Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Bulk AMMO Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2011.01.17 Page 1 of 10 SVD1N80B/F/M/T_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TJ Tstg Symbol VDS VGS ID I...