SVF5N60DTR

SVF5N60T/F/D/MJ_Datasheet 5A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF5N60T/F/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 5A,600V,RDS(on)（typ）=1.88Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF5N60T SVF5N60F SVF5N60D SVF5N60DTR SVF5N60MJ Package TO-220-3L TO-220F-3L TO-252-2L TO-252-2L TO-251J-3L Marking SVF5N60T SVF5N60F SVF5N60D SVF5N60D SVF5N60MJ Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tape & Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.2 2011.09.13 Page 1 of 10 SVF5N60T/F/D/MJ_Datasheet ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TC=25°C TC=100°C Symbol VDS VGS ID IDM PD EAS TJ Tstg 120 0.96 242 -55～+150 -...