SVF12N60STR

SVF12N60T/F/FG/S/K_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N60T/F/FG/S/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 12A,600V,RDS(on)(typ)=0.58Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF12N60T SVF12N60F SVF12N60FG SVF12N60S SVF12N60STR SVF12N60K Package TO-220-3L TO-220F-3L TO-220F-3L TO-263-2L TO-263-2L TO-262-3L Marking SVF12N60T SVF12N60F SVF12N60FG SVF12N60S SVF12N60S SVF12N60K Material Pb free Pb free Halogen free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape&Reel Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.5 2012.08.23 Page 1 of 9 Silan Microelectronics SVF12N60T/F/FG/S/K_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Ratings Characteristics Symbol SVF12N 60T Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temp...