ALJD882

SUNROC ALJD882 FEATURES Power dissipation 2.COLLECTOR TRANSISTOR (NPN) TO-92 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 6 3 0.625 150 -55-150 Units V V V A W ℃ ℃ 3.BASE 1 2 3 ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions MIN 40 30 6 1 10 1 60 400 0.5 1.5 50 V V MHz TYP MAX UNIT V V V µA µA µA IC = 100μA, IE=0 IC = 10mA, IB=0 IE= 100μA, IC=0 VCB= 40V, IE=0 VCE= 30V, IB=0 VEB= 6V, IC=0 VCE=2V, IC= 1A IC= 2A, IB= 0.2 A IC= 2A, IB= 0.2 A VCE= 5V , f =10MHz Ic=0.1A CLASSIFICATION OF hFE Rank Range R 200-400 ...