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SVF1N60AM/MJ/B/D/F/H_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
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1A,600V,RDS(on)(typ.)=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF1N60AM SVF1N60AMJ SVF1N60ABTR SVF1N60AD SVF1N60ADTR SVF1N60AF SVF1N60AH Package TO-251D-3L TO-251J-3L TO-92-3L TO-252-2L TO-252-2L TO-220F-3L SOT-223-3L Marking SVF1N60AM SVF1N60AMJ 1N60A SVF1N60AD SVF1N60AD SVF1N60AF SVF1N60AH Material Pb free Pb free Pb free Pb free Pb free Pb free Pb free Packing Tube Tube AMMO Tube Tape & Reel Tube Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.9
2012.07.27 Page 1 of 12
Silan Microelectronics
SVF1N60AM/MJ/B/D/F/H_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Rating Characteristics Symbol SVF1N 60AM/D Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range TC=25°C TC=100°C VDS VGS ID IDM PD EAS TJ Tstg 28 0.22 30 0.24 SVF1N SVF1N 60MJ 60AB 600 ±30 1.0 0.6 4.0 9 0.072 52 -55~+150 -55~+150 18 0.14 22 0.18 SVF1N 60AF SVF1N 60AH V V A A W W/°C mJ °C °C Unit
THERMAL CHARACTERISTICS
Rating Characteristics Symbol SVF1N 60AM/D Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RθJC RθJA 4.55 110 SVF1N SVF1N 60MJ 4.17 110 60AB 13.9 120 SVF1N 60AF 6.94 120 SVF1N 60AH 5.68 60 °C/W °C/W Unit
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd (Note 2,3) VDS=480V,ID=1.0A, VGS=10V (Note 2,3) Test conditions VGS=0V, ID=250µA VDS=600V, VGS=0V VGS=±30V, VDS=0V VGS= VDS, ID=250µA VGS=10V, ID=0.5 A Min. 600 --2.0 -----------Typ. ----6.8 139.0 23.4 0.6 6.1 11.9 8.3 15.3 3.37 1.16 1.04 Max. -1.0 ±100 4.0 8.1 170 25 4.5 24 52 50 64 6.2 --nC ns pF Unit V µA nA V Ω
VDS=25V,VGS=0V, f=1.0MHZ VDD=300V,ID=1.0A, RG=25Ω
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.9
2012.07.27 Page 2 of 12
Silan Microelectronics
SVF1N60AM/MJ/B/D/F/H_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Notes: 1. L=30mH, IAS=1.74A, VDD=110V, RG=25Ω,starting TJ=25°C; 2.Pulse Test: Pulse width ≤300μs,Duty cycle≤2%; 3. Essentially independent of operating temperature. Symbol IS ISM VSD Trr Qrr Test conditions Integral Reverse P-N Junction Diode in the MOSFET IS=1.0A,VGS=0V IS=1.0A,VGS=0V, dIF/dt=100A/µS (Note 2) Min. -----Typ. ---190 0.53 Max. 1.0 4.0 1.5 --A V ns µC Unit
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics 10
Variable VGS=4.5V VGS=5V VGS=5.5V VGS=6V VGS=7V VGS=8V VGS=10V VGS=15V
Figure 2. Transfer Characteristics 10
-55°C 25°C 150°C
Drain Current – ID(A)
1
Drain Current – ID(A)
1
Notes: 1.250µS pulse test 2.TC=25°C
Notes: 1.250µS pulse test 2.VDS=50V
0.1 0.1
1
10
100
0.1
0
1
2
3
4
5
6
7
8
9 10
Drain-Source Voltage – VDS(V) Figure 3. On-Resitance Variation vs. Drain Current and Gate Voltage
Gate-Source Voltage– VGS(V) Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10
16
Drain-Source On-Resistance – RDS(on)(Ω)
14 12 10 8 6 4 2 0 0
Reverse Drain Current – IDR(A)
VGS=10V VGS=20V
-55°C 25°C 150°C
1
Note: TJ=25°C
Notes: 1.250µS pulse test 2.VGS=0V
0.5
1.0
1.5
2.0
2.5
3.0
0.1
0
0.25
0.50
0.75
1.00
1.25
Drain Current – ID(A)
Source-Drain Voltage– VSD(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.9
2012.07.27 Page 3 of 12
Silan Microelectronics
SVF1N60AM/MJ/B/D/F/H_Datasheet
TYPICAL CHARACTERISTICS (continued)
Figure 5. Capacitance Characteristics 350 12
Ciss=Cgs+Cgd(Cds=shorted) Coss=Cds+Cgd Crss=Cgd
Figure 6. Gate Charge Characteristics
VDS=120V VDS=300V VDS=480V
Gate-Source Voltage– VGS(V)
300
10 8 6 4 2
Capasistance(pF)
250 200 150 100 50 0 0.1 1 10
Ciss Coss Crss
.