SVD1N60M/T/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin
TM
structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resist...
