SVD740F

SVD740T/F_Datasheet 10A, 400V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD740T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary Rin TM S- structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ 10A,400V,RDS(on)（typ）=0.45 Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD740T SVD740F Package TO-220-3L TO-220F-3L Marking SVD740T SVD740F Material Pb free Pb free Packing Tube Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD EAS TJ Tstg 160 1.28 384 -55～+150 -55～+150 Rating SVD740T 400 ±30 10 52 0.42 SVD740F Unit V V A W W/°C mJ °C °C HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.1 2010.10.29 Page 1 of 7 SVD740T/F_Datasheet THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVD740T 0...