Si4835DY

Si4835DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) 0.019 @ VGS = - 10 V 0.033 @ VGS = - 4.5 V ID (A) - 8.0 - 6.0 S S S SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel) D D D D P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 30 "25 - 8.0 - 6.4 - 50 - 2.1 2.5 1.6 - 55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta t v 10 sec Steady State RthJA 70 Symbol Typical Maximum 50 Unit _C/W Notes a. Surface Mounted on FR4 Board. b. t v10 sec. Document Number: 70836 S-31062—Rev. B, 26-May-03 www.vishay.com 1 Si4835DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = - 250 mA VDS = 0 V, VGS = "25 V VDS = - 30 V, VGS = 0 V VDS = - 30 V, VGS = 0 V, TJ = 70_C VDS w - 5 V, VGS = - 10 V ID(on) D( ) VDS w - 5 V, VGS = - 4.5 V VGS = - 10 V, ID = - 8.0 A Drain Source On-State Drain-Source On State Resistancea Forward Transcon...