SVF13N50T/F/PN_Datasheet
13A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF13N50T/F/PN is an N-channel enhancement mod...
SVF13N50T/F/PN_Datasheet
13A, 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF13N50T/F/PN is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
13A, 500V, RDS(on)(typ.)= 0.44@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVF13N50F SVF13N50T SVF13N50PN
Package
TO-220F-3L TO-220-3L
TO-3P
Marking
SVF13N50F SVF13N50T
13N50
Hazardous Substance Control
Pb free Pb free Pb free
Packing
Tube Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.0 Page 1 of 9
SVF13N50T/F/PN_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25C) - Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Rating
Storage Temperature Rating
VDS VGS
ID
IDM
PD
EAS TJ Tstg
SVF13N50T
190 1.52
Ratings SVF13N50F
500 ±30
13 8.2 52
51 0.41 663 -55~+150 -55~+150
SVF13N50PN
218 1.74
Unit
V V
A
A W W/C mJ...