SVF13N50F

SVF13N50T/F/PN_Datasheet 13A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF13N50T/F/PN is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This device is widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  13A, 500V, RDS(on)(typ.)= 0.44@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVF13N50F SVF13N50T SVF13N50PN Package TO-220F-3L TO-220-3L TO-3P Marking SVF13N50F SVF13N50T 13N50 Hazardous Substance Control Pb free Pb free Pb free Packing Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:2.0 Page 1 of 9 SVF13N50T/F/PN_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25C, unless otherwise noted) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25C) - Derate above 25C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Rating Storage Temperature Rating VDS VGS ID IDM PD EAS TJ Tstg SVF13N50T 190 1.52 Ratings SVF13N50F 500 ±30 13 8.2 52 51 0.41 663 -55～+150 -55～+150 SVF13N50PN 218 1.74 Unit V V A A W W/C mJ...