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AO4620 Dataheets PDF



Part Number AO4620
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description MOSFET
Datasheet AO4620 DatasheetAO4620 Datasheet (PDF)

AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24m Ω (VGS=10V) < 36m Ω (VGS=4.5V) 100% UIS tested 100% Rg tested p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 32m Ω (VGS = -10V) < 55m Ω (VGS = -4.5V) SOIC-8 Top View Bottom View.

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AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features n-channel VDS (V) = 30V ID = 7.2A (VGS=10V) RDS(ON) < 24m Ω (VGS=10V) < 36m Ω (VGS=4.5V) 100% UIS tested 100% Rg tested p-channel -30V -5.3A (VGS = -10V) RDS(ON) < 32m Ω (VGS = -10V) < 55m Ω (VGS = -4.5V) SOIC-8 Top View Bottom View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 Pin1 G1 S1 D2 D1 n-channel Max p-channel -30 ±20 -5.3 -4.5 -40 2 1.44 17 43 -55 to 150 p-channel Units V V A Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current F Pulsed Drain Current Power Dissipation Avalanche Current F B B B VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD IAR EAR TJ, TSTG ±20 7.2 6.2 64 2 1.44 9 12 -55 to 150 W A mJ ° C Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 50 80 32 50 80 32 Max 62.5 100 40 62.5 100 40 Units ° C/W ° C/W ° C/W ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 N-CHANNEL Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.2A RDS(ON) gFS VSD IS ISM Static Drain-Source On-Resistance VGS=4.5V, ID=5A Forward Transconductance Diode Forward Voltage Pulsed Body-Diode CurrentB 373 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 67 41 1.8 7.2 VGS=10V, VDS=15V, ID=7.2A 3.5 1.3 1.7 4.5 VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω IF=7.2A, dI/dt=100A/µs 2.7 14.9 2.9 10.5 4.5 12.6 2.8 11 VDS=5V, ID=7.2A IS=1A,VGS=0V C TJ=125° 1.5 64 17.7 25 24.8 20 0.74 1 2.5 64 448 24 32 36 2.1 Min 30 1 5 100 2.6 Typ Max Units V µA nA V A mΩ mΩ S V A A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.2A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating. Rev 8: May 2012 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4620 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 10V 50 40 ID (A) 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 45 VGS=4.5V VGS=4.5V 30 25 20 15 10 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V VGS=10V Normalized On-Resistance 40 35 RDS(ON) (mΩ ) 5V 6V 12 6V 15 VDS=5V VDS=5V 4.5V ID(A) 9 6 VGS=3.5V 3 125°C 125°C 25°C 25° 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 1.6 1.4 1.2 1 0.8 0.6 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V Id=7.7A VGS=4.5V Id=5A 60 ID=7.2A ID=7.7A 50 RDS(ON) (mΩ ) 40 125°C 125° IS (A) 1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 .


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