64Gb(8192M x 8bit) Legacy MLC NAND Flash
H27UCG8T2ATR-BC Series 64Gb(8192M x 8bit) Legacy MLC NAND Flash
F20 64Gb MLC NAND Flash Memory TSOP Legacy
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Description
H27UCG8T2ATR-BC Series 64Gb(8192M x 8bit) Legacy MLC NAND Flash
F20 64Gb MLC NAND Flash Memory TSOP Legacy
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.1/ Nov. 2011 1
H27UCG8T2ATR-BC Series 64Gb(8192M x 8bit) Legacy MLC NAND Flash Document Title 64Gbit(8192M x 8bit) Legacy NAND Flash Memory Revision History
Revision No. 0.0 0.1 0.2 0.3 1.0 1.1 Initial Draft Update Product Feature(Page3), AC timing characteristics(Page19) Revised errata Add Paired page address 1.0 Released CLE, ALE Hold Time Changed History Draft Date Sep.27.2010 Feb.17.2011 Sep.22.2011 Oct.7.2011 Oct.18.2011 Nov.18.2011 Remark Preliminary Preliminary Preliminary Preliminary -
Rev 1.1/ Nov. 2011
2
H27UCG8T2ATR-BC Series 64Gb(8192M x 8bit) Legacy MLC NAND Flash Product Feature
■ Multi Level Cell (MLC) Technology ■ Power Supply Voltage - VCC / VCCq= 2.7V ~ 3.6V ■ Organization - Page Size : 8192 + 640(Spare) bytes - Block Size : 2M + 160K bytes, 256pages - Plane Size : 2048 + 42(Extended) blocks - Device Size : 4096 + 84(Extended) blocks ■ Page Read Time - Random Read Time (tR) : 60/80us(Typ./Max) - Sequential Access (tRC/tWC) : 16ns(Min.) ■ Page Write Time - Page Program Time : 1500(Typ.) ■ Block Erase Time - Block Erase Time : 5.0ms(Typ.) ■ Hardware Data Protection - Program/Erase locked during power transitions ■ Package - Package type : TSOP - Chip coun...
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