M2S1G64CBH4B5P

M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 (1GB) / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features Performance: Speed Sort DIMM CAS Latency fck – Clock Frequency tck – Clock Cycle fDQ – DQ Burst Frequency PC3-8500 -BE 7 533 1.875 1066 PC3-10600 -CG 9 667 1.5 1333 PC3-12800 -DI 11 800 1.25 1600 MHz ns Mbps Programmable Operation: - DIMM  Latency: 5, 6, 7, 8/PC3-8500; 5, 6, 7, 8, 9/PC3-10600; 5, 6, 7, 8, 9, 10, 11/PC3-12800 - Burst Type: Sequential or Interleave - Burst Length: BC4, BL8 - Operation: Burst Read and Write Two different termination values (Rtt_Nom & Rtt_WR) 14/10/1 (row/column/rank) Addressing for 1GB 15/10/1 (row/column/rank) Addressing for 2GB 15/10/2 (row/column/rank) Addressing for 4GB Extended operating temperature rage Auto Self-Refresh option Serial Presence Detect Gold contacts 1GB: SDRAMs are in 96-ball BGA Package 2GB: SDRAMs are in 78-ball BGA Package 4GB: SDRAMs are in 78-ball BGA Package RoHS compliance and Halogen free Unit 204-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) 1GB: 128Mx64 Unbuffered DDR3 SO-DIMM based on 128Mx16 DDR3 SDRAM B-Die devices. 2GB: 256Mx64 Unbuffered DDR3 SO-DIMM based on 256Mx8 DDR3 SDRAM B-Die devices. 4GB: 512Mx64 Unbuffered DDR3 SO-DIMM based on 256Mx8 DDR3 SDRAM B-Die devices. Intended for 533MHz/667MHz/800MHz applications ...