STA6611

STA6611 SamHop Microelectronics Corp. Nov. 22, 2006 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) PRODUCT SUMMARY VDSS 30V (N-Channel) Max PRODUCT SUMMARY VDSS -30V (P-Channel) Max ID 7.6A RDS(ON) ( m Ω ) ID -6.6A RDS(ON) ( m Ω ) 23 @ VGS = 10V 30 @ VGS = 4.5V 35 @ VGS = -10V 55 @ VGS = -4.5V D1 8 D1 7 D2 6 D2 5 P DIP -8 1 1 2 3 4 S1 G1 S 2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C IDM IS PD Ta=70 C T J , T S TG ID N-Channel P-Channel 30 20 7.6 6 30 1.7 3 2 -55 to 150 -30 20 - 6.6 5.3 28 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a 1 R JA 41.5 C /W S T A 6611 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID =7A V GS =4.5V, ID =5A V DS = 15V, V GS = 10V V DS = 10V, ID =7A Min Typ C Max Unit 30 1 10 1.0 1.7 17 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA uA V m ohm ON CHAR ACTE R IS TICS b Gate Threshold Volta...