STS6604L

Green Product STS6604L Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS 20 PRODUCT SUMMARY (P-Channel) V DSS -20V ID 4A R DS(ON) (m Ω) Max 60 @ VGS=4.5V ID -2.5A R DS(ON) (m Ω) Max 138 @ VGS=-4.5V 190 @ VGS=-2.5V 75 @ VGS=2.5V SOT 26 Top View D1 D2 G1 S2 G2 1 2 3 6 5 4 D1 S1 D2 G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a N-Channel 20 ±12 TA=25°C TA=70°C TA=25°C TA=70°C 4 3.2 10 a P-Channel -20 ±12 -2.5 -2 9.4 1.25 0.8 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 100 °C/W Details are subject to change without notice. Jul,22,2010 1 www.samhop.com.tw STS6604L Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=16V , VGS=0V 20 1 ±100 V uA nA VGS=±12V , VDS=0V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=4.5V , ID=4A VGS=2.5V , ID=3.5A VDS=5V , ID=4A...