Green Product
S T U309DH
Apr 20 2007
S amHop Microelectronics C orp.
Dual E nhancement Mode Field E ffect Transistor ...
Green Product
S T U309DH
Apr 20 2007
S amHop Microelectronics C orp.
Dual E nhancement Mode Field E ffect
Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
V DS S
30V
P R ODUC T S UMMAR Y (P -C hannel)
V DS S
-30V
ID
18A
R DS (ON) ( m Ω )
Max
ID
-14A
R DS (ON) ( m Ω )
Max
22 @ V G S = 10V 34 @ V G S = 4.5V
D1
34 @ V G S = -10V 54 @ V G S = -4.5V
D2
D1/D2
G1 G2
S1
G1 S2 G2 TO-252-4L
S1
N-ch
S2
P -ch
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Tc -P ulsed
a
S ymbol V DS V GS 25 C 70 C ID IDM IS Tc= 25 C PD Tc= 70 C
N-C hannel P-C hannel 30 20 18 15 50 10 11 7.7 -30 20 -14 -12 -50 -6
Unit V V A A A A
Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange
W C
T J , T S TG
-55 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
13.6 120
C /W C /W
S T U309DH
N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
b
Condition
V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 10A V GS =4.5V, ID= 8A V DS = 5V, V GS = 4.5V V DS = 10V, ID= 10A
Min Typ C Max Unit
30 1 10 1
1.8
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gat...