STU314D

Green Product STU314D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) V DSS 30V PRODUCT SUMMARY (P-Channel) V DSS -30V ID 16A R DS(ON) (m Ω) Max 28 @ VGS=10V ID -14A R DS(ON) (m Ω) Max 34 @ VGS=-10V 55 @ VGS=-4.5V 40 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a N-Channel P-Channel 30 -30 ±20 ±20 TC=25°C TC=70°C 16 13 47 16 TC=25°C TC=70°C 10.4 6.7 -55 to 150 -14 -11 -42 64 Units V V A A A mJ W W °C -Pulsed Sigle Pulse Avalanche Energy d Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 12 60 °C/W °C/W Details are subject to change without notice. Feb,04,2009 1 www.samhop.com.tw STU314D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±10 V uA uA VGS= ...