STM8458

STM8458 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 6.3A R DS(ON) (m Ω) Max 32 @ VGS=10V ID -5.1A R DS(ON) (m Ω) Max 48 @ VGS=-10V 68 @ VGS=-4.5V 42 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a N-Channel 40 ±20 TA=25°C TA=70°C 6.3 5.0 25 6 TA=25°C TA=70°C 2 1.28 P-Channel -40 ±20 -5.1 -4.1 -20 12 Units V V A A A mJ W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Jun,12,2008 1 www.samhop.com.tw STM8458 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c a 40 1 ±10 uA uA VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=6.3A VGS=4.5V , ID=5....