STM8456

STM8456 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS 40V PRODUCT SUMMARY (P-Channel) V DSS -40V ID 6.2A R DS(ON) (m Ω) Max 33 @ VGS=10V ID -5.3A R DS(ON) (m Ω) Max 45 @ VGS=-10V 70 @ VGS=-4.5V 45 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage a N-Channel 40 ±20 TA=25°C TA=70°C d P-Channel -40 ±20 -5.3 -4.2 -22 16 2 1.28 Units V V A A A mJ W °C Drain Current-Continuous -Pulsed b 6.2 4.9 25 9 Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. May,29,2008 1 www.samhop.com.tw STM8456 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c a 40 1 ±100 uA nA VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=6.2A VGS=4.5V , I...