STM8300

Green Product STM8300 Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS 30V PRODUCT SUMMARY (P-Channel) V DSS -30V ID 5.3A R DS(ON) (m Ω) Max 46 @ VGS=10V ID -4.7A R DS(ON) (m Ω) Max 56 @ VGS=-10V 90 @ VGS=-4.5V 65 @ VGS=4.5V D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a N-Channel 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 5.3 4.2 19 a P-Channel -30 ±20 -4.7 -3.8 -17 2.0 1.28 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Jul,31,2008 1 www.samhop.com.tw STM8300 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS VGS(th) RDS(ON) gFS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=5.3A VGS=4.5V , ID=4.5A VDS=5V , ID=5.3A 1 1.6 38 48 ...