STM8358S

S T M8358S S amHop Microelectronics C orp. Oct.28, 2005 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 7.2A R DS (ON) ( m W ) Max ID -5.2A R DS (ON) ( m W ) Max 25 @ V G S = 10V 36 @ V G S = 4.5V D1 8 48 @ V G S = -10V 72 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed a S ymbol V DS V GS 25 C 70 C ID IDM IS Ta= 25 C Ta=70 C PD T J , T S TG N-C hannel P-C hannel 30 20 7.2 6.1 29 1.7 2 1.44 -55 to 150 -30 20 -5.2 -4.4 -20 -1.7 Unit V V A A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M8358S N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 7A V GS =4.5V, ID= 5A V DS = 5V, V GS = 4.5V V DS = 5V, ID = 7A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.8 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS T...