Green Product
STF443
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
PROD...
Green Product
STF443
Ver 1.0
S a mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS ID R DS(ON) (m Ω) Max
47 @ VGS=-4.5V 48 @ VGS=-4.0V -20V -4.5A 50 @ VGS=-3.7V 56 @ VGS=-3.1V 64 @ VGS=-2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
D P IN 1 D D G G
D D S
T DF N 2X2
S
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b a d
Limit -20 ±10 TA=25°C TA=70°C TA=25°C TA=70°C -4.5 -3.6 -23
a
Units V V A A A W W °C
Maximum Power Dissipation
1.67 1.07 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
75
°C/W
Details are subject to change without notice.
Apr,26,2013
1
www.samhop.com.tw
STF443
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min -20 -1 ±10 Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th)
VGS=0V , ID=-250uA VDS=-16V , VGS=0V
V uA uA
VGS= ±10V , VDS=0V
VDS=VGS , ID=-1.0mA VGS=-4.5V , ID=-2.25A VGS=-4.0V , ID=-2.25A VGS=-3.7V , ID=-2.25A VGS=-3.1V , ID=-2.25A VGS=-2.5V , ID=-2.25A VDS=-5V , ID=-2.25A
-0.5 27 28 29 32 36
-0.75 36 37...