STU601S

r Pr STU601S Ver 2.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V ID -15A R DS(ON) (m Ω) Max 95 @ VGS=-10V 125 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G S STU SERIES TO - 252AA( D - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit -60 ±20 -15 -12 -45 36 Units V V A A A mJ W W °C TC=25°C TC=70°C d -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25°C TC=70°C 42 27 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient a 3 50 °C/W °C/W Details are subject to change without notice. Nov,16,2011 1 www.samhop.com.tw STU601S Ver 2.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V 1 ±10 VDS=VGS , ID=-250uA VGS=-10V , ID=-7.5A VGS=-4.5V , ID=-6.5...