Green Product
STU/D417S
Ver 1.2
S a mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect ...
Green Product
STU/D417S
Ver 1.2
S a mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect
Transistor
PRODUCT SUMMARY
V DSS
-40V
ID
-43A
R DS(ON) (m Ω) Typ
14 @ VGS=-10V 23 @ VGS=-4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
G S
G D
S
STU SERIES TO - 252AA( D - PAK )
STD SERIES TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
Limit -40 ±20 -43 -34.4 -130 225
Units V V A A A mJ W W °C
TC=25°C TC=70°C
d
-Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation
a
TC=25°C TC=70°C
42 27 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case a R JA Thermal Resistance, Junction-to-Ambient
a
3 50
°C/W °C/W
Details are subject to change without notice.
Aug,23,2010
1
www.samhop.com.tw
STU/D417S
Ver 1.2
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=-250uA VDS=-32V , VGS=0V
Min -40
Typ
Max
Units V uA nA
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VGS= ±20V , VDS=0V
1 ±100
VDS=VGS , ID=-25...
