STU435S

Gr Pr STU/D435S Ver 1.0 S a mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -40V ID -38A R DS(ON) (m Ω) Max 17.5 @ VGS=10V 27 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. G S G D S STU SERIES TO - 252AA( D - PAK ) STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range a Limit -40 ±20 Units V V A A A mJ W W °C TC=25°C TC=70°C c -38 -30.4 -115 156 TC=25°C TC=70°C 42 27 -55 to 150 THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 3 50 °C/W °C/W Details are subject to change without notice. Jul,01,2011 1 www.samhop.com.tw STU/D435S ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-32V , VGS=0V Ver 1.0 Min -40 Typ Max Units V uA nA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b VGS= ±20V , VDS=0V 1 ±100 VDS=VGS , ID=-250uA VGS=-10V , ID=...