STS6601

Green Product STS6601 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SOT-26 package. ID -3.2A R DS(ON) (m Ω) Max 110 @ VGS=-10V 160 @ VGS=-4.5V S OT26 Top View D D D G 1 2 3 6 5 4 D D S G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit -60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C -3.2 -2.6 -12 a Units V V A A A W W °C Maximum Power Dissipation 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.5 °C/W Details are subject to change without notice. Sep,30,2008 1 www.samhop.com.tw STS6601 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V -1 ±100 uA nA VDS=VGS , ID=-250uA VGS=-10V , ID=-3.2A VGS=-4.5V , ID=-2.6A VDS=-10V , ID=-3.2A -1.0 -2.0 88 120 6.3 745 69 42 12 12 65.8 22 13.5 6.5 1.5 3.2 -3 110...