STM6967

Green Product STM6967 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -60V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID -4A R DS(ON) (m Ω) Max 86 @ VGS=-10V 125 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit -60 ±20 -4 -3.2 -22 49 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Apr,28,2010 1 www.samhop.com.tw STM6967 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-48V , VGS=0V Min -60 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VGS= ±20V , VDS=0V -1 ±10 uA uA VDS=VGS , ID=-250uA VGS=-10V , ID=-4A VGS=-4.5V , ID=-3.3A VDS=-5V , ID=-4A -2.0 -2.4 69 93 15 1110 79 56 -4.0 86...