STM4639T

Green Product STM4639T Ver 1.1 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -10A R DS(ON) (m Ω) Max 12.5 @ VGS=-10V 16.5 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TA=25°C TA=70°C Limit -30 ±24 -10 -8 -56 156 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C 2.5 1.6 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Dec,24,2013 1 www.samhop.com.tw STM4639T Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-10mA VDS=-24V , VGS=0V Min -30 Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance c VGS= ±24V , VDS=0V -1 ±10 uA uA VDS=VGS , ID=-0.5mA VGS=-10V , ID=-5A VGS=-4.5V , ID=-5A -1.0 -1.7 10 13 -3.0 12.5 16.5 V m ohm m ohm pF pF pF DYNAMIC C...