STM4633

STM4633 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. ID -7.0A R DS(ON) (m Ω) Max 33 @ VGS=-10V 52 @ VGS=-4.5V D D 5 6 7 8 4 3 2 1 G S S S S O-8 1 D D ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C ID Drain Current-Continuous a TA=70°C IDM E AS PD TJ, TSTG -Pulsed b d Limit -30 ±20 -7 -5.6 -40 20 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a TA=25°C TA=70°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 50 °C/W Details are subject to change without notice. Aug,13,2008 1 www.samhop.com.tw STM4633 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance c VGS=0V , ID=-250uA VDS=-24V , VGS=0V -30 -1 ±10 V uA uA VGS= ±20V , VDS=0V VGS(th) RDS(ON) gFS VDS=VGS , ID=-250uA VGS=-10V , ID=-7A VGS=-4.5V , ID=-5.6A VDS=-15V , ID=-7A -1 -1.7 26 39 9.5 -3 33 52 V m ohm m o...