Document
Green Product
SP3902
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
10A
R DS(ON) (m Ω) Max
17 @ VGS=10V 27 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
D1
D1
D2
D2
PIN1
PDFN 5x6
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d ae
Limit 30 ±20 TA=25°C TA=70°C 10 8 42 49 TA=25°C TA=70°C 2.5 1.6 -55 to 150
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 50 °C/W
Details are subject to change without notice.
Jul,18,2013
1
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SP3902
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=24V , VGS=0V
30 1 ±100
V uA nA
VGS= ±20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=5A VGS=4.5V , ID=4A VDS=10V , ID=5A
1.0
1.7 13 19 18
2.5 17 27
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=15V,VGS=0V f=1.0MHz
500 119 93
pF pF pF
VDD=15V ID=1A VGS=10V RGEN= 6 ohm VDS=15V,ID=5A,VGS=10V VDS=15V,ID=5A,VGS=4.5V VDS=15V,ID=5A, VGS=10V
12.8 14.6 17.3 16 9 5.1 1.4 3
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=3A
0.81
1.3
V
Notes
_ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) e.Drain current limited by maximum junction temperature.
Jul,18,2013
2
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SP3902
Ver 1.1
40 VGS=10V VGS=5V VGS=4.5V 24 30
ID, Drain Current(A)
VGS=4V
ID, Drain Current(A)
32
24
18 Tj=125 C 12 25 C 6 -55 C
16
VGS=3.5V
8 VGS=3V 0
0
0.5
1.0
1.5
2.0
2.5
3.0
0 0 0.8 1.6 2.4 3.2 4.0 4.8
VDS, Drain-to-Source Voltage(V)
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60
Figure 2. Transfer Characteristics
1.6
R DS(on), On-Resistance Normalized
50 40 30 V G S =4.5V 20 10 1 1 8 16 24 V G S =10V
1.5 1.4 1.3 1.2 1.1 1.0 0
V G S =4.5V I D =4A V G S =10V I D =5A
RDS(on)(m Ω)
32
40
0
25
50
75
100
125
I D, Drain Current(A)
150 T j ( °C )
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
Vth, Normalized Gate-Source Threshold Voltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA
1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25
0
25
50
75 100 125 150
Tj, Junction Temperature( ° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variation with Temperature
Jul,18,2013
3
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SP3902
Ver 1.1
48 40 32 20
Is, Source-drain current(A)
I D =5A
10
RDS(on)(m Ω)
24 16 75 C 8 0
125 C
25 C 125 C 75 C
25 C
1 0 2 4 6 8 10 0 0.25 0.50 0.75 1.00 1.25
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
900
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
V GS, Gate to Source Voltage(V)
750
C, Capacitance(pF)
8
VDS=15V ID=5A
600 450 300
Ciss
6
4
Coss 150 Crss 0 0 5 10 15 20 25 30
2
0 0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
N) Lim it
10 0u s
I D, Drain Current(A)
TD(off )
Switching Time(ns)
Tr
TD(on)
10
R
(O DS
Tf
1m
s
10
10
10
0m
ms
s
1
DC
VDS=15V,ID=1A VGS=10V
1 1 6 10 60 100
0.1 0.1
VGS=10V Single Pulse TA=25 C
1 10
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jul,18,2013
4
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SP3902
Ver 1.1
V(BR)DSS tp
L VDS
RG
20V
D.U.T
IAS
tp
0.01
+ - VDD
IAS
Unclamped Inductive Waveforms Figure 13b.
Uncamped Inductive Test Circuit Figure 13a.
1
0.5
Normalized Transient Thermal Resistance
0.2
0.1
0.1 0.05 0.02 0.01 P DM
0.01
Single Pulse
1. 2. 3. 4.
t1
t2
R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P.