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SP3902 Dataheets PDF



Part Number SP3902
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SP3902 DatasheetSP3902 Datasheet (PDF)

Green Product SP3902 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 10A R DS(ON) (m Ω) Max 17 @ VGS=10V 27 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Dr.

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Green Product SP3902 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 10A R DS(ON) (m Ω) Max 17 @ VGS=10V 27 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d ae Limit 30 ±20 TA=25°C TA=70°C 10 8 42 49 TA=25°C TA=70°C 2.5 1.6 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 50 °C/W Details are subject to change without notice. Jul,18,2013 1 www.samhop.com.tw SP3902 Ver 1.1 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=24V , VGS=0V 30 1 ±100 V uA nA VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=5A VGS=4.5V , ID=4A VDS=10V , ID=5A 1.0 1.7 13 19 18 2.5 17 27 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=15V,VGS=0V f=1.0MHz 500 119 93 pF pF pF VDD=15V ID=1A VGS=10V RGEN= 6 ohm VDS=15V,ID=5A,VGS=10V VDS=15V,ID=5A,VGS=4.5V VDS=15V,ID=5A, VGS=10V 12.8 14.6 17.3 16 9 5.1 1.4 3 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=3A 0.81 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 300us, Duty Cycle < _ 2%. b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13) e.Drain current limited by maximum junction temperature. Jul,18,2013 2 www.samhop.com.tw SP3902 Ver 1.1 40 VGS=10V VGS=5V VGS=4.5V 24 30 ID, Drain Current(A) VGS=4V ID, Drain Current(A) 32 24 18 Tj=125 C 12 25 C 6 -55 C 16 VGS=3.5V 8 VGS=3V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 Figure 2. Transfer Characteristics 1.6 R DS(on), On-Resistance Normalized 50 40 30 V G S =4.5V 20 10 1 1 8 16 24 V G S =10V 1.5 1.4 1.3 1.2 1.1 1.0 0 V G S =4.5V I D =4A V G S =10V I D =5A RDS(on)(m Ω) 32 40 0 25 50 75 100 125 I D, Drain Current(A) 150 T j ( °C ) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S I D =250uA 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,18,2013 3 www.samhop.com.tw SP3902 Ver 1.1 48 40 32 20 Is, Source-drain current(A) I D =5A 10 RDS(on)(m Ω) 24 16 75 C 8 0 125 C 25 C 125 C 75 C 25 C 1 0 2 4 6 8 10 0 0.25 0.50 0.75 1.00 1.25 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 900 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 750 C, Capacitance(pF) 8 VDS=15V ID=5A 600 450 300 Ciss 6 4 Coss 150 Crss 0 0 5 10 15 20 25 30 2 0 0 2 4 6 8 10 12 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 N) Lim it 10 0u s I D, Drain Current(A) TD(off ) Switching Time(ns) Tr TD(on) 10 R (O DS Tf 1m s 10 10 10 0m ms s 1 DC VDS=15V,ID=1A VGS=10V 1 1 6 10 60 100 0.1 0.1 VGS=10V Single Pulse TA=25 C 1 10 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Jul,18,2013 4 www.samhop.com.tw SP3902 Ver 1.1 V(BR)DSS tp L VDS RG 20V D.U.T IAS tp 0.01 + - VDD IAS Unclamped Inductive Waveforms Figure 13b. Uncamped Inductive Test Circuit Figure 13a. 1 0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 Single Pulse 1. 2. 3. 4. t1 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P.


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