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SP8601 Dataheets PDF



Part Number SP8601
Manufacturers SamHop Microelectronics
Logo SamHop Microelectronics
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SP8601 DatasheetSP8601 Datasheet (PDF)

Green Product SP8601 Ver 2.5 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 17.5 @ VGS=4.5V 18.5 @ VGS=4.0V 20V 7.2A 20.0 @ VGS=3.7V 24.5 @ VGS=3.1V 27.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM P.

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Green Product SP8601 Ver 2.5 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max 17.5 @ VGS=4.5V 18.5 @ VGS=4.0V 20V 7.2A 20.0 @ VGS=3.7V 24.5 @ VGS=3.1V 27.0 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D1 D1 D2 D2 S mini 8 P IN 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c c TA=25°C TA=70°C TA=25°C TA=70°C Limit 20 ±12 7.2 5.8 43 1.47 0.94 -55 to 150 Units V V A A A W W °C Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 85 °C/W Details are subject to change without notice. Jul,18,2014 1 www.samhop.com.tw SP8601 Ver 2.5 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VDS=16V , VGS=0V Min 20 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) VGS= ±8V , VDS=0V 1 ±1 VDS=VGS , ID=1.0mA VGS=4.5V , ID=1.8A VGS=4.0V , ID=1.8A VGS=3.7V , ID=1.8A VGS=3.1V , ID=1.8A VGS=2.5V , ID=1.8A VDS=5V , ID=3.6A 0.5 12.0 12.5 13.5 14.5 18.0 0.95 14.5 15.0 16.0 18.5 22.0 18 1.5 17.5 18.5 20.0 24.5 27.0 V m ohm m ohm m ohm m ohm m ohm S RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge b VDS=10V,VGS=0V f=1.0MHz 320 106 92 pF pF pF VDD=16V ID=3.6A VGS=4.0V RGEN= 6 ohm VDS=16V,ID=7.2A, VGS=4.0V 13.5 30 19 13.5 7.2 1.4 4 ns ns ns ns nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Diode Forward Voltage VSD VGS=0V,IS=7.2A 0.89 1.2 V Notes _ 1%. _ 10us, Duty Cycle < a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Drain current limited by maximum junction temperature. d.Mounted on FR4 Board of 1 inch2 , 2oz. Jul,18,2014 2 www.samhop.com.tw SP8601 Ver 2.5 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 120 3 dT - Percentage of rated Power - % PT - Total Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 175 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 175 Mounted on FR-4 board of 1 inch2 , 2oz TA - Ambient Temperature - °C TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 ID - Drain Current - A 10 R DS ) Li (ON mit 100us 1ms 1 10ms 100ms 0.1 VGS=4.5V Single Pulse TA=25 C 1 10 10s DC 0.01 0.1 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - °C/W 100 Mounted on FR-4 board of 1 inch2 , 2oz 10 1 Single Pulse 0.1 0.001 0.01 0.1 1 PW - Pulse Width - s 10 100 1000 Jul,18,2014 3 www.samhop.com.tw SP8601 Ver 2.5 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 20 100 VGS = 4.5 V 16 4.0 V 3.7 V ID - Drain Current - A 10 ID - Drain Current - A 12 3.1 V 2.5 V 1 TA = -25°C 8 0.1 125°C 25°C 75°C 4 0 0 0.2 0.4 0.6 0.8 1 0.01 0 0.5 1 1.5 2 2.5 3 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS(off) - Gate to Source Cut-off Voltage - V GATEBTO SOURE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1.1 ЮyfsЮ- Forward Transfer Admittance - S 100 ID = 1.0mA 1.0 TA = -25°C 10 25°C 75°C 0.9 1 125°C 0.8 0.1 0.7 0.6 -50 0 50 100 150 0.01 0.01 0.1 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 50 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 40 ID = 1.8 A 30 40 VGS = 2.5 V 3.1 V 4.0 V 3.7 V 30 20 20 10 4.5 V 10 0 0.1 1 10 100 0 0 2 4 6 8 10 12 ID - Drain Current - A VGS - Gate to Source Voltage - V Jul,18,2014 4 www.samhop.com.tw SP8601 Ver 2.5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 1000 40 30 VGS = 2.5 V 3.1 V 3.7 V 4.0 V 4.5 V ID = 1.8 A Ciss, Coss, Crss - Capacitance - pF Ciss 100 20 Coss Crss 10 0 -50 0 50 100 150 10 0.1 1 10 100 Tch - Channel Temperature - °C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS td(on), tr, td(off), tf - Switchi.


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