SP8008

Green Product SP8008 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Typ 3.9 @ VGS=10V 30V 28A 4.2 @ VGS=4.5V 5.2 @ VGS=2.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM EAS PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a c Limit 30 ±12 Units V V A A mJ W °C TA=25°C 28 84 182 Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TA=25°C 1.67 -55 to 150 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Aug,13,2013 1 www.samhop.com.tw SP8008 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS BVDSX IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VGS=-20V , ID=10mA VDS=30V , VGS=0V 30 10 10 ±10 V V uA uA VGS= ±12V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance b VDS=VGS , ID=0.2mA VGS=10V , ID=14A VGS=4.5V , ID=14A VGS=2.5V , ID=14A 0.5 0.8 3.9 4.2 5.2 1.5 4.9 5.5 7.0 V m ohm m...